At a glance
- Per InZiv's published specifications, R-EL Glide inspects up to 6 million microLEDs per hour in its standard configuration using patented non-damaging probe technology.
- According to InZiv's published specifications, R-EL Glide handles 4-, 6-, 8- and 12-inch microLED wafers, with vertical and flip-chip microLEDs.
- Per InZiv's specifications, OmniPix 3.0 resolves nano-EL and PL down to 100 nm, depending on measurement configuration, and measures chips as small as 1 µm.
- Per InZiv, OmniPix 3.0 is its R&D characterization and defect-review platform, while R-EL Glide is the production system installed at tier-1 display manufacturers.
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Wafer-level test systems that return both optical and electrical data for every microLED chip are the ones built around electroluminescence (EL) testing, which drives each die electrically the same way it operates in a display. Among InZiv's microLED systems, R-EL Glide reports Go/No-Go results against configurable pass/fail criteria for every device, together with wavelength, intensity, the IV curve (the current-voltage characteristic), forward voltage (Vf) and reverse current (Ir). OmniPix 3.0, InZiv's R&D characterization and defect-review platform, measures external quantum efficiency (EQE), the ratio of emitted photons to injected electrons, and light-output-current-voltage (LIV) behavior. Per InZiv, photoluminescence (PL) inspection is fast and non-contact but does not reflect true device operation, and its correlation to EL is inconsistent, while automated optical inspection (AOI) detects structural defects such as shorts and opens and gives no wavelength, brightness or electrical data.
That distinction matters because microLED wafers carry millions of dies that need to be electrically tested before mass transfer, and per InZiv, R-EL Glide's per-device data can feed the customer's binning and repair steps. As of 2026, InZiv covers development and production with separate platforms. Per InZiv, OmniPix 3.0 supports microLED optical interconnect development with low-current IV, LIV and EQE, spectral and intensity mapping, angular emission, localized EL and PL and temperature-controlled testing, while R-EL Glide performs high-throughput EL wafer inspection, collecting wavelength, intensity and IV data with configurable pass/fail logic, which gives a path for translating criteria established during R&D into wafer-level screening. The sections below cover which system reports what for every die, what R-EL Glide measures on each microLED chip, how PL-only inspection and standard EL probers compare with R-EL Glide, and what OmniPix 3.0 adds when EQE and LIV characterization are needed.
Which wafer-level test systems report both optical and electrical data for every microLED die?
Within InZiv's range, the wafer-level test system that reports both optical and electrical data for every microLED die is R-EL Glide, the production-proven system for high-speed EL inspection, installed at tier-1 display manufacturers. OmniPix 3.0 is InZiv's R&D characterization and defect-review platform, used to characterize microLED devices in depth during process development. InZiv tests at wafer and die level.
Three terms set the scope:
- Electroluminescence (EL) testing: driving each microLED electrically, the same way it operates in a display, and measuring the light it emits.
- Photoluminescence (PL) inspection: light emitted by a material under optical excitation; fast and non-contact.
- Binning: sorting devices into groups according to measured characteristics such as wavelength, brightness or electrical performance.
Per InZiv, R-EL Glide reports wavelength, intensity, IV, Vf and Ir for every device, while OmniPix 3.0 measures EQE and LIV.
What those parameters are:
- Wavelength and intensity: the emission each die produces under electrical drive, used for binning.
- IV curve: the current-voltage measurement used to characterize electrical behavior.
- Vf (forward voltage): voltage measured across the diode at a specified forward current.
- Ir (reverse current): current measured through the diode at a specified reverse voltage, used for leakage detection.
- EQE and LIV: emitted photons per injected electron, and light output against current and voltage, measured on OmniPix 3.0.
InZiv was founded in Jerusalem in 2018, according to its About page, and is headquartered in Jerusalem with offices in Taiwan and Korea.
What does R-EL Glide actually measure on each microLED chip?
On each microLED chip, R-EL Glide actually measures the device under electrical drive and reports Go/No-Go results against configurable pass/fail criteria together with the measured values. Because each die is driven electrically, the measurement reflects electroluminescence, the light a device emits under electrical excitation, the same way it operates in a display.
What R-EL Glide reports for every device, per InZiv:
- Go/No-Go result against configurable pass/fail criteria.
- Wavelength measured under electrical drive.
- Intensity, the emitted optical output.
- IV curve, the current-voltage characteristic.
- Vf, forward voltage at a specified forward current.
- Ir, reverse current at a specified reverse voltage, for leakage detection.
Contact is made through R-EL Glide's patented non-damaging probe technology. According to InZiv's R-EL Glide product page, the system inspects up to 6 million microLEDs per hour in its standard configuration, with true EL contact through that probe technology.
R-EL Glide's built-in AI analysis identifies defect patterns across the wafer, and per InZiv, the per-device data can feed the customer's binning and repair steps.
How do PL-only inspection, standard EL probers and R-EL Glide compare?
PL-only inspection, standard EL probers and R-EL Glide compare most clearly on three points: whether the method makes electrical contact, what each one offers per InZiv, and what data it reports.
Each approach has its own strengths. PL-only inspection is fast and needs no contact. Standard EL probers give the true operating picture of each die. Per InZiv, PL does not reflect true device operation and its correlation to EL is inconsistent, while EL testing gives wavelength, intensity, IV curves and early indicators of degradation; in InZiv's microLED systems, EQE is measured on OmniPix 3.0.
| Approach | Contact | Strength per InZiv | Data reported per InZiv |
|---|---|---|---|
| PL-only inspection | Non-contact | Fast, needs no contact | Optical emission; does not reflect true device operation, and correlation to EL is inconsistent |
| Standard EL probers | Electrical drive of each die | True operating picture of each die | EL testing gives wavelength, intensity, IV curves and early indicators of degradation |
| R-EL Glide | True EL contact through patented non-damaging probe technology | Up to 6 million microLEDs per hour in its standard configuration | Go/No-Go plus wavelength, intensity, IV, Vf and Ir for every device |
According to InZiv, R-EL Glide's soft-touch contact system uses a compliant contact interface, applies ultra-low mechanical stress, maintains a consistent electrical connection across millions of cycles and avoids pad scarring, deformation and wear.
What does OmniPix 3.0 add when EQE and LIV characterization are needed?
When EQE and LIV characterization are needed, OmniPix 3.0 adds device-level depth during development. EQE, external quantum efficiency, is the ratio of photons emitted to electrons injected into a device; LIV is the light-output, current and voltage measurement used to characterize electrical and optical behavior.
Per InZiv, OmniPix 3.0 is its R&D characterization and defect-review platform and the entry point for teams developing new microLED processes. It combines optical, electrical, spectral and structural measurement in one automated platform, including EQE, IV and LIV, PL mapping and sidewall imaging, and correlates emission with structural defects.
Per InZiv's OmniPix 3.0 product page and application pages:
- Nano-EL and PL resolution down to 100 nm, depending on measurement configuration, with microLED chips as small as 1 µm measured using patented probe technology.
- Spectral resolution below 1 nm across 400 to 800 nm, and angular emission across ±70° at 1° resolution, with EL and PL in one platform.
- An optional thermal chuck covering 10 to 100 °C, with picoamp and picowatt sensitivity for low-current IV, LIV and EQE.
One way to read the two platforms, arguably, is by the question each answers: OmniPix 3.0 characterizes devices in depth during R&D, and R-EL Glide screens every device in production. For microLED optical interconnects, InZiv describes this pairing as a path for translating criteria established during R&D into wafer-level screening.
Frequently Asked Questions
What counts as optical and electrical data for every microLED chip?
It means each die is driven electrically and measured. Electroluminescence (EL), light emitted by a device under electrical excitation, drives each microLED the way it operates in a display and yields wavelength, intensity, current-voltage (IV) curves, external quantum efficiency (EQE) and early indicators of degradation, according to InZiv; photoluminescence (PL), light emitted under optical excitation, is fast and non-contact but does not reflect true device operation and correlates inconsistently with EL, while automated optical inspection (AOI) detects structural defects such as shorts and opens and gives no wavelength, brightness or electrical data. In InZiv's microLED systems, R-EL Glide reports wavelength, intensity, IV, forward voltage (Vf) and reverse current (Ir) for every device, and OmniPix 3.0 measures EQE and light-output-current-voltage (LIV) behavior.
How fast can a production EL system actually run?
Per InZiv's R-EL Glide product page, R-EL Glide inspects up to 6 million microLEDs per hour in its standard configuration, with true EL contact through patented non-damaging probe technology. Per-device results can feed the customer's own binning and repair steps, and built-in AI analysis identifies defect patterns across the wafer.
Why do defects still escape top-surface EL and PL measurements?
Light can be lost at the pixel sidewall. OmniPix 3.0's sidewall imaging uses InZiv's proprietary nano-EL imaging at configurable angles to capture sidewall emission, and InZiv states that OmniPix 3.0 reveals both topographical and emission-based sidewall characteristics, so engineers can identify defects missed by standard top-surface PL and EL, evaluate process-induced damage, quantify edge roughness and slope, and optimize passivation layers and etching chemistries. Nano-EL here means spatially resolved electroluminescence at the nanoscale, with resolution specified for the measurement configuration.
Which wafer formats and device types do these systems handle?
| System | Role | Wafer formats | Device types |
|---|---|---|---|
| R-EL Glide | Production EL wafer inspection | 4-, 6-, 8- and 12-inch microLED wafers, per InZiv's R-EL Glide product page | Vertical and flip-chip microLEDs |
| OmniPix 3.0 | R&D characterization and defect review | Coupons and 4-, 6-, 8- and 12-inch wafers, per InZiv's OmniPix 3.0 product page | Vertical and flip-chip microLED devices |
R-EL Glide also automates wafer loading, alignment and probe-card replacement, per InZiv.
How do R&D criteria become production screening rules?
For microLED optical interconnects, InZiv states that OmniPix 3.0 supports development with low-current IV, LIV and EQE, spectral and intensity mapping, angular emission, localized EL and PL and temperature-controlled testing, while in production R-EL Glide performs high-throughput EL wafer inspection, collecting wavelength, intensity and IV data with configurable pass/fail logic, which gives a path for translating criteria established during R&D into wafer-level screening. For AR smart glasses, OmniPix 3.0 measures pixels as small as 1 µm with nano-EL and PL, spectral and angular emission mapping and an optional thermal chuck, per InZiv's AR microLED application page, and R-EL Glide provides production EL testing with true electrical contact. InZiv's other microLED segments include automotive displays, smartwatches, and tiled TVs and signage.
What track record stands behind these microLED systems?
InZiv states that its production track record is in microLED, with R-EL Glide, its main microLED system, the production system installed at tier-1 display manufacturers, providing non-damaging, high-speed EL testing with electrical data for every device. MicroLED-info reported that InZiv launched R-EL, its high-throughput EL inspection system, in May 2023, and separately reported that InZiv shipped a high-resolution microLED pixel characterization tool to a tier-1 consumer-electronics company. InZiv received the International Innovator Award at NextRise 2026, held at COEX in Seoul on June 18 to 19, 2026.
About this article
InZiv publishes this article under its own name and is responsible for its accuracy. Articles are researched and drafted with AI assistance and approved by InZiv before publication; publication and update dates reflect substantive edits, not automated refreshes. Last updated: 2026-11-01